Optoelectronic Properties of Two-Dimensional Molybdenum Ditelluride Nanophotonic Device
Open AccessThe development of graphene and the revolution in nanotechnology have sparked new interest in layered transition metal dichalcogenides (TMD). These TMDs were first studied in the 1960s, and because of their extensive material properties from semiconductors, metals to superconductors, they have become the subject of concern. Through intercalation chemistry, the parameters of the material can be flexibly adjusted to the required characteristics. As a new material that can control or interact with light to convert photons into electrical signals, its application in photonics, electronics and optoelectronics is very attractive. Two-dimensional materials interact with light in the wavelength regions of different spectral regions together with gap-free graphene. These spectral regions have short-wave ultraviolet and extreme ultraviolet, visible light, near-infrared, mid-infrared, and terahertz due to their excellent Absorptivity enables ultra-fast and ultra-sensitive detection of light in photodetectors. Next-generation photodetectors may be promising candidates for high sensitivity. TMD-based photodetectors are at the core of many technologies that understand the principles of photodetection and device performance.This thesis paper, we fabricated Molybdenum Ditelluride (MoTe2) based the field effect transistors (FETs) to test the optoelectronic properties of MoTe2. This thesis also introduces the fabrication process of MoTe2 based photodetector devices integrated with microring resonators (MRR). In addition, we also demonstrate the strain-effect to the materials and show the performance between unstrained and strained devices.
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