Theoretical Study and Simulation of on-chip MOSFET's as Hall Effect Sensors

In this paper, the basic operating principles and applications of the Hall effect and the split-drain devices are first presented as an introduction to the magnetic sensitive MOSFET's (MAGFET's). Then, a novel alternative of on-chip magnetic sensing is proposed by using just the regular MOSFET's. In order to verify this idea, detailed theoretical modeling and device simulations are conducted and it has been proved that the proposed device has at least comparable sensitivity to the traditional split-drain devices.In addition, few application concerns and the corresponding solutions are mentioned to provide a general overview of the future practical implementation.

Author

• Jin, Tingshu

Language

• en

Keyword

• MOSFET
• CMOS
• Sensitivity
• Hall Effect Sensor

Date created

• 2014

Type of Work

• Master's Thesis

License

• All rights reserved

Rights statement

• In Copyright

GW Unit

• Electrical Engineering

Degree

• M.S.

Advisor

• Korman, Can E.

Committee Member(s)

• Korman, Can E.
• Ivanov, Tony
• Ahmadi, Shahrokh
• Zaghloul, Mona
• Li, Zhenyu

Persistent URL

•  https://scholarspace.library.gwu.edu/etd/qf85nb49x