Memristor-based Switch Matrices for Radio-Frequency Applications
Open Access DepositedThe increased number of devices linked to the internet has allowed an effortless connection between people across the world. While trying to keep production costs low, manufacturers face challenges in adapting their devices to different RF standards worldwide. One solution to this problem is the use of tunable RF switches. Traditional components like PIN diodes, transistors and RF MEMS have been used to create these types of switches. However, issues such as high-power consumption and poor reliability have focused research into alternative technologies for producing the best tunable RF switches. ReRAM material stands out for its superior characteristics such as non-volatility and high durability, making it an excellent candidate for these switches.This work aims to develop Resistive RAM (memristor) based C and R type radio-frequency switches with capability for integrating into compact radio-frequency switch matrices for application in X-band RF circuits (8-12GHZ). The rationale for using memristor devices is that it has a straightforward two-terminal layout, allowing resistance modification with low voltage (<1V), exhibiting exceptional durability where the programmed resistance is stored in a non-volatile fashion. Starting from designing a single memristor based RF switch, the research progresses towards integration into a 3x3 matrix, with a focus on minimizing the insertion loss and maximizing the isolation. The design and operation differences between C-type and R-type switches are examined, with an analysis of their respective advantages and disadvantages. This work extends to exploring different materials and methods for enhancing the single switch design and additionally improving the overall results. In our simulations, we replicate the behavior of the memristor based RF switch by simulating scenarios such as open and short circuits, as well as varying resistance simulations. The Simulation results are benchmarked against existing technologies, showing the superior performance of our devices compared to traditional switch technologies. These promising results suggest that this non-volatile switch has the potential to replace conventional RF switches relying on MEMS, PIN diodes, and transistors, particularly in applications where storage of state is paramount.
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Pavleski_gwu_0075M_16865.pdf | 2024-10-02 | Open Access |
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