A RF Graphene FET Large-Signal Compact Model Compatible with Circuit Simulators

Graphene, a one-dimensional array of carbon atoms, is a unique material which has yet to be fully utilized. It is being investigated for its applications in the digital, analog, and high frequency (RF) domains. While it lacks a natural bandgap, rendering it unsuitable for digital circuitry without additional modification of electrical characteristics, graphene is applicable to a wide spectrum of RF applications ranging from communications platforms to flexible electronics. Specifically, its use in building RF field-effect transistors (FETs) can lead to better performance metrics, higher bandwidths, and faster data transmission rates. Graphene FETs (GFETs) are attractive because the graphene channel can be grown over large-area surfaces, and the devices typically exhibit high electron and hole mobilities and high achievable current densities [1]. In order to bridge the gap between device simulation and circuit design, a closed-form large-signal compact model compatible with commercially available circuit simulators is desired. The primary investigation of this study is to develop such a model and to evaluate its accuracy with measured and simulated data.

Author

• Trocchia, Scott Marshall

Language

• en

Keyword

• graphene
• modeling
• FET
• ADS
• graphene FET
• compact model

Date created

• 2012

Type of Work

• Master's Thesis

License

• All rights reserved

Rights statement

• In Copyright

GW Unit

• Computer Engineering

Degree

• M.S.

Advisor

• Korman, John (Can) E

Committee Member(s)

• Zaghloul, Mona E
• Ahmadi, Shahrokh
• Ivanov, Tony G

Persistent URL

•  https://scholarspace.library.gwu.edu/etd/5712m6656