5GHz Doherty Amplifier Designed in Triquent GaAs Process
Open AccessAbstract of Thesis5GHz Doherty Amplifier Designed in Triquent GaAs ProcessModern communication systems are incorporating spectrally efficient modulation schemes in an attempt to get closer to the maximum transmission data rate. These modulation schemes tend to be a combination of amplitude and phase modulation schemes and require extremely linear transmitters. The bottleneck in most modern transmitters is the power amplifier. The linearity and power efficiency of the power amplifier determines the quality of the transmitter to a large degree. Generally, power amplifiers are either very efficient and very non-linear or very linear with moderate to low efficiency. Thus transmitters which require high linearity usually operate the power amplifier below the maximum efficiency point and have a narrow input power range over which the amplifier is linear.Recently, designers are using an old structure which solves the problem of linearity and efficiency simultaneously. The Doherty Amplifier structure is being investigated at higher frequency ranges and higher output power. Up to this point, Doherty structures at frequencies of 2 to 2.5 GHz have been reported in literature. Most of structures were not fully integrated on chip. The input matching circuit and output power combiners were manufactured at the board level. This thesis shows a Doherty structure at an extended frequency range with all of the components on chip. The commercial GaAs process from Triquent was used in the implementation. The simulated results along with measured results are presented.
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Mcknight_gwu_0075M_10886.pdf | 2018-01-16 | Open Access |
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